SILC Measurements of Thin SiO2 at Low Voltages: High-resolution measurements and interpretation
نویسندگان
چکیده
Stress-Induced Leakage current (SILC) on ultra-thin SiO2 was measured in-situ by using a high-resolution measurement technique in a special designed chamber at 100°C with temperature stability of 0.002°C. A gate stress voltage range was measured from –3.1V down to –1.5V in steps of 0.2V. Even at these low voltages, no significant change in the degradation mechanism could be observed. Extrapolations of high voltage measurements to operating voltage are possible, provided that the correct extrapolation model is used.
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